APT20M45BVRG datasheet(2/4 Pages) MICROSEMI

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Dynamic Characteristics

APT20M45BVR(G)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

iss

Input Capacitance

GS = 0V

DS = 25V

f = 1MHz

4050

4860

oss

Output Capacitance

980

1375

rss

Reverse Transfer Capacitance

300

450

Total Gate Charge 1

GS = 10V

DD= 0.5VDSS

D = ID[cont.]@ 25°C

130

195

Gate-Source Charge

Gate- Drain ("Miller") Charge

d(on)

Turn-on Delay Time

GS = 10V

DD= 0.5VDSS

D = ID[cont.]@ 25°C

G = 1.6Ω

Rise Time

d(off)

Turn-off Delay Time

Fall Time

714

1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471

temperature.

4 Starting T

j = +25°C, L = 830μH, RG = 25Ω, Peak IL = 56A

2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%

Microsemi Reserves the right to change, without notice, the speciﬁcations and information contained herein.

Source-Drain Diode Ratings and Characteristics

Symbol

Characteristic / Test Conditions

Min

Typ

Max

Unit

Continuous Source Current (Body Diode)

Amps

Pulse Source Current 1 (Body Diode)

224

Diode Forward Voltage 2 (V

GS = 0V, IS= -ID[Cont.])

1.3

Volts

Reverse Recovery Time (I

S = -ID[Cont.], dIS/dt = 100A/μs)

280

rr)

Reverse Recovery Time (I

S = -ID[Cont.], dIS/dt = 100A/μs)

3.5

μC

Symbol

Characteristic

Min

Typ

Max

Unit

θJC

Junction to Case

0.42

C °/W

θJA

Junction to Ambient

Thermal Characteristics

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