APT6045B_SVFR(G)

1

5

10

50 100

600

.01

.1

1

10

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0

50

100

150

200

250

0.2

0.4

0.6

0.8

1.0

1.2

1.4

T

T

SINGLE PULSE

100

50

10

5

1

0.5

0.1

20

16

12

8

4

0

OPERATION HERE

LIMITED BY R

DS

(ON)

T

T

C

rss

C

oss

C

iss

10,000

5,000

1,000

500

100

50

50

10

5

1

.5

.1

V

V

I

10μS

1mS

10mS

100mS

DC

100μS

V

V

V

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

Q

V

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583

4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

and foreign patents. US and Foreign patents pending. All Rights Reserved.

e3 100% Sn Plated

TO-247 (B) Package Outline

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

15.95 (.628)

16.05(.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs.}

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018)

{3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

and Leads

are Plated

3.81 (.150)

4.06 (.160)

(Base of Lead)

1.98 (.078)

2.08 (.082)

Gate

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51(.532)

Revised

8/29/97

1.04 (.041)

1.15(.045)

13.79 (.543)

13.99(.551)

Revised

4/18/95

Drain

Source

Heat Sink (Collector)

Drain

Source