APTC60AM24T1G datasheet(2/6 Pages) MICROSEMI

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APTC60AM24T1G

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VGS = 0V,VDS = 600V

Tj = 25°C

350

IDSS

Zero Gate Voltage Drain Current

VGS = 0V,VDS = 600V

Tj = 125°C

600

µA

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 47.5A

Ω

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 5mA

2.1

3.9

IGSS

Gate – Source Leakage Current

VGS = ±20 V, VDS = 0V

200

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

14.4

Coss

Output Capacitance

VGS = 0V ; VDS = 25V

f = 1MHz

Total gate Charge

300

Qgs

Gate – Source Charge

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 300V

ID = 95A

102

Td(on)

Turn-on Delay Time

Rise Time

Td(off)

Turn-off Delay Time

100

Fall Time

Inductive Switching (125°C)

VGS = 10V

VBus = 400V

ID = 95A

RG = 2.5Ω

Eon

Turn-on Switching Energy

1350

Eoff

Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 10V ; VBus = 400V

ID = 95A ; RG = 2.5Ω

1040

µJ

Eon

Turn-on Switching Energy

2200

Eoff

Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 10V ; VBus = 400V

ID = 95A ; RG = 2.5Ω

1270

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

Continuous Source current

(Body diode)

Tc = 80°C

VSD

Diode Forward Voltage

VGS = 0V, IS = - 95A

1.2

dv/dt

Peak Diode Recovery

V/ns

trr

Reverse Recovery Time

Tj = 25°C

600

Qrr

Reverse Recovery Charge

IS = - 95A

VR = 350V

diS/dt = 200A/µs

Tj = 25°C

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

IS ≤ - 95A

di/dt

≤ 200A/µs

VR ≤ VDSS

Tj ≤ 150°C

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