APTC90DAM60CT1G

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6 – 6

Typical CR1 SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Forward Characteristics

0

10

20

30

40

50

60

0

0.5

11.5

22.5

33.5

Reverse Characteristics

0

75

150

225

300

400

600

800

1000 1200 1400 1600

Capacitance vs.Reverse Voltage

0

300

600

900

1200

1500

1800

2100

1

10

100

1000

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

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