Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

APTC90HM60T3G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTC90HM60T3G
Description  Full - Bridge Super Junction MOSFET Power Module
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTC90HM60T3G Datasheet(HTML) 2 Page - Microsemi Corporation

  APTC90HM60T3G Datasheet HTML 1Page - Microsemi Corporation APTC90HM60T3G Datasheet HTML 2Page - Microsemi Corporation APTC90HM60T3G Datasheet HTML 3Page - Microsemi Corporation APTC90HM60T3G Datasheet HTML 4Page - Microsemi Corporation APTC90HM60T3G Datasheet HTML 5Page - Microsemi Corporation  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
APTC90HM60T3G
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 900V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 900V
Tj = 125°C
1000
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 52A
50
60
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 6mA
2.5
3
3.5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
200
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
13.6
Coss
Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz
0.66
nF
Qg
Total gate Charge
540
Qgs
Gate – Source Charge
64
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 52A
230
nC
Td(on)
Turn-on Delay Time
70
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
400
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 52A
RG = 3.8Ω
25
ns
Eon
Turn-on Switching Energy
3
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
1.5
mJ
Eon
Turn-on Switching Energy
4.2
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
1.7
mJ
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
59
IS
Continuous Source current
(Body diode)
Tc = 80°C
44
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 52A
0.8
1.2
V
trr
Reverse Recovery Time
Tj = 25°C
920
ns
Qrr
Reverse Recovery Charge
IS = - 52A
VR = 400V
diS/dt = 200A/µs
Tj = 25°C
60
µC
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
RthJC
Junction to Case Thermal Resistance
0.27
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
110
g



Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com