2N918UB datasheet(1/2 Pages) MICROSEMI

Part #	2N918UB

Description	NPN SILICON SWITCHING TRANSISTOR

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/301

T4-LDS-0010 Rev. 1 (072019)

Page 1 of 2

DEVICES

LEVELS

2N918

2N918UB

JAN

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

15

Vdc

Collector-Base Voltage

VCBO

30

Vdc

Emitter-Base Voltage

VEBO

3.0

Vdc

Collector Current

IC

50

mAdc

Total Power Dissipation @ T

A = +25°C

(1)

PT

200

mW

Operating & Storage Junction Temperature Range

Top & Tstg

-65 to +200

°C

1) Derate linearly 1.14mW/°C above T

A > 25°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 3mAdc

V(BR)CEO

15

Vdc

Collector-Base Cutoff Current

VCB = 30Vdc

VCB = 25Vdc

ICBO

1.0

10

µAdc

ηAdc

Emitter-Base Cutoff Current

VEB = 3.0Vdc

VEB = 2.5Vdc

IEBO

10

µAdc

ηAdc

Forward-Current Transfer Ratio

IC = 0.5mAdc, VCE = 10Vdc

IC = 3.0mAdc, VCE = 10Vdc

IC = 10mAdc, VCE = 10Vdc

hFE

10

20

200

Collector-Emitter Saturation Voltage

IC = 10mAdc, IB = 1.0mAdc

VCE(sat)

0.4

Vdc

Base-Emitter Voltage

IC = 10mAdc, IB = 1.0mAdc

VBE(sat)

1.0

Vdc

TO-72

2N918

3 PIN

2N918UB

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