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ARF475FL Datasheet(PDF) 3 Page - Microsemi Corporation |
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ARF475FL Datasheet(HTML) 3 Page - Microsemi Corporation |
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3 / 4 page ![]() ARF475FL Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance Freq. (MHz) Zin (Ω) gate to gate Z OL (Ω) drain - drain 30 60 90 120 150 5.2 -j10 1.37 -j5.2 .53 -j2.6 .25 -j1.0 .25 +j0.2 41 -j20 26 -j25 16 -j23 10 -j20 6.7 -j17 Zin - Gate -gate shunted with 25Ω IDQ = 15mA each side Z OL - Conjugate of optimum load for 600 Watts peak output at Vdd = 150V 25% duty cycle and PW = 5ms Figure 5b, TRANSIENT THERMAL IMPEDANCE MODEL Note: Duty Factor D = t1/t 2 Peak TJ = PDM x ZθJC + TC t1 t2 SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULARPULSEDURATION(SECONDS) FIGURE 5a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.05 D = 0.9 0.0755 0.0893 0.0135F 0.161F Dissipated Power (Watts) T J (C) T C (C) Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. |
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