MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. MICROSEMI RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN

INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

Microsemi 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

JTDB75

75 Watts, 36 Volts, Pulsed

Avionics 960 - 1215 MHz

GENERAL DESCRIPTION

The JTDB75 is a high power COMMON BASE bipolar transistor.

It is

designed for pulsed systems in the frequency band 960-1215 MHz. The device

has gold thin-film metallization and diffused ballasting for proven highest

MTTF.

The transistor includes input and output prematch for broadband

capability.

Low thermal resistance package reduces junction temperature,

extends life.

CASE OUTLINE

55AW, Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25

220 W

Maximum Voltage and Current

55 V

3.5 V

8.0 A

Maximum Temperatures

Storage Temperature

-65 to +200

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

F

= 960-1215 MHz

75

W

Power Input

Vcc = 36 Volts

15

W

Power Gain

PW = 10

µsec, Note 1

7.0

8.2

dB

η

c

Collector Efficiency

DF = 40%, Note 1

40

%

VSWR

1

Load Mismatch Tolerance

F = 1090 MHz

3:1

FUNCTIONAL CHARACTERISTICS @ 25

°C

Emitter to Base Breakdown

Ie = 30 mA

3.5

V

Collector to Emitter Breakdown

Ic = 30 mA

55

V

DC – Current Gain

Vce = 5V, Ic = 1A

20

100

Thermal Resistance

0.8

°C/W

NOTE 1: At rated output power and pulse conditions

2. At rated pulse conditions

.

Rev A: Dec 2009