DXT2013P5 datasheet(4/7 Pages) DIODES

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DXT2013P5

Document number: DS32010 Rev. 2 - 2

4 of 7

www.diodes.com

March 2010

DXT2013P5

PowerDI is a registered trademark of Diodes Incorporated.

A Product Line of

Diodes Incorporated

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

-140

-160

⎯

IC = -100μA

Collector-Emitter Breakdown Voltage (Note 7)

V(BR)CEO

-100

-115

⎯

IC = -10mA

Emitter-Base Breakdown Voltage

V(BR)EBO

-7.0

-8.1

⎯

IE = -100μA

Collector Cutoff Current

ICBO

⎯

-20

-0.5

μA

VCB = -100V

VCB = -100V, Tamb = 100 °C

Collector Cutoff Current

ICER

≤1kΩ

⎯

-20

-0.5

μA

VCB = -100V

VCB = -100V, Tamb = 100 °C

Emitter Cutoff Current

IEBO

⎯

-10

VEB = -6V

Collector-Emitter Saturation Voltage (Note 7)

VCE(sat)

⎯

-20

-70

-120

-240

-30

-90

-150

-340

IC = -0.1A, IB = -10mA

IC = -1A, IB = -100mA

IC = -2A, IB = -200mA

IC = -4A, IB = -400mA

Base-Emitter Saturation Voltage (Note 7)

VBE(sat)

⎯

-985

-1100

IC = -4A, IB = -400mA

Base-Emitter Turn-On Voltage (Note 7)

VBE(on)

⎯

-920

-1050

VCE = -4V, IC = -2A

DC Current Gain (Note 7)

hFE

100

⎯

250

200

⎯

300

⎯

IC = -10mA, VCE = -1V

IC = -1A, VCE = -1V

IC = -3A, VCE = -1V

IC = -4A, VCE = -1V

IC = -10A, VCE = -1V

Transition Frequency

⎯

125

⎯

MHz

IC = -100mA, VCE = -10V,

f = 50MHz

Output Capacitance

Cobo

⎯

VCB = -10V, f = 1MHz

Switching Times

ton

toff

⎯

540

⎯

IC = -1A, VCC = -10V,

IB1 = IB2 = -100mA

Notes:

7. Pulse Test: Pulse width

≤300μs. Duty cycle ≤2.0%.

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