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MDS60L

60 Watts, 50 Volts, Pulsed

Avionics 1030 - 1090 MHz

GENERAL DESCRIPTION

The MDS60L is a high power COMMON BASE bipolar transistor.

It is

designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band.

The transistor includes a double input prematch for broadband performance.

The device has gold thin-film metallization and diffused ballasting in a

hermetically sealed package for proven highest MTTF.

CASE OUTLINE

55AW Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25

120 W

Maximum Voltage and Current

65 V

3.5 V

4 A

Maximum Temperatures

Storage Temperature

-65 to +150

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

60

W

Power Input

6

W

Power Gain

10

dB

η

c

Collector Efficiency

F = 1030, 1090 MHz

Vcc = 50 Volts

PW = Note 2

DF = Note 2

34

%

VSWR

Load Mismatch Tolerance

2:1

Pd

1

Pulse Droop

0.8

dB

Trise

1

Rise Time

100

nSec

FUNCTIONAL CHARACTERISTICS @ 25

°C

Emitter to Base Breakdown

Ie = 5 mA

3.5

V

Collector to Emitter Breakdown

Ic = 25 mA

65

V

Collector to Base Breakdown

Ic = 25 mA

65

V

DC – Current Gain

Vce = 5V, Ic = 500 mA

20

Thermal Resistance

0.5

°C/W

NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS

NOTE 2: ELM Burst: 32µSec ON/ 18µSec OFF x 48, repeated at 23mSec

Rev B: Updated July 2009