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MS2205

DESCRIPTION:

The MS2205 is a common base, silicon NPN microwave transistor

designed for Class C driver applications under DME or IFF pulse

conditions. This device is capable of withstanding an infinite load

VSWR at any phase angle under rated conditions.

Symbol

Parameter

Value

Unit

Power Dissipation

7.5

W

Collector-Emitter Bias Voltage

37

V

Junction Temperature

200

º

C

Device Current

1.0

A

Storage Temperature

-65 to +200

º

C

Thermal Data

Junction-case Thermal Resistance*

35

°C/W

Revision 1

Features

• 1025-1150 MHz

• GOLD METALLIZATION

• INFINITE VSWR CAPABILITY @ RATED CONDITIONS

• Pout = 4 W MINIMUM

• COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

.280 2LFL (M220)

Epoxy Sealed