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MS2228 Datasheet(PDF) 1 Page - Microsemi Corporation |
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MS2228 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 5 page ![]() MS2228 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS DESCRIPTION: The MS2228 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and is capable of withstanding 10:1 output VSWR at rated RF conditions. Internal input and output matching provide optimum performance and product consistency. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation 175 W IC Device Current 5.4 A Vcc Collector-Supply Voltage 55 V TJ Junction Temperature 200 °C TSTG Storage Temperature -65 to +200 °C Thermal Data RTH(J-C) Thermal Resistance Junction-case ∗ 0.86 °C/W Revision A, October 2009 Features • 1090 MHz • 50 VOLTS • P OUT = 75 WATTS • G P = 9.2 dB MINMUM • 10:1 VSWR CAPABILITY • COMMON BASE CONFIGURATION |
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