MSC1090M datasheet(1/3 Pages) MICROSEMI

Part #	MSC1090M

Description	RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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MSC1090M

Microsemi reserves the right to change, without notice, the specifications and information contained

herein. Visit our web site at www.microsemi.com or contact our factory direct.

DESCRIPTION:

The MSC1090M is a medium power Class C transistor designed

specifically for pulsed L-Band avionics applications. Low RF thermal

resistance and emitter ballasting ensure high reliability and product

consistency.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation

220

W

VCBO

Collector Base Voltage

65

V

Vces

Collector Emitter Voltage

65

V

Vebo

Emitter Base Voltage

3.5

V

TJ

Junction Temperature

200

ºC

IC

Device Current

5.52

A

TSTG

Storage Temperature

-65 to +150

ºC

Thermal Data

RTH(j-c)

Junction-Case Thermal Resistance

.8

°C/W

Revision A, January 2010

Features

• 1025-1150 MHz

• GOLD METALLIZATION

• INPUT MATCHED

• INFINITE VSWR CAPABILITY @ RATED CONDITIONS

• P

OUT = 90 W MINIMUM

• G

P = 8.4 dB

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MSC1090M Datasheet(PDF) 1 Page - Microsemi Corporation

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