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2SC2412 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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2SC2412 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() RECTRON SEMICONDUCTOR FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 2SC2412 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) Emitter cut-off current (VEB= 7V, IC=0) DC current gain (VCE= 6V, IC= 1mA) Collector cut-off current (VCB= 60V, IE=0) Collector-emitter saturation voltage (IC= 50mA, IB= 5mA) Transition frequency (VCE= 12V, IC= 2mA, f= 100MHZ) CHARACTERISTICS SYMBOL UNITS - - - - 0.1 560 m A m A V V V V MHz Collector-base breakdown voltage (IC= 50mA, IE=0) Collector-emitter breakdown voltage (IC= 1mA, IB=0) Emitter-base breakdown voltage (IE= 50mA, IC=0) CLASSIFICATION OF hFE(1) RANK Range Marking Q 120-270 180-390 BQ BR V(BR)CBO V(BR)CEO V(BR)EBO IEBO hFE ICBO VCE(sat) fT MAX. - - - - - TYP. 60 50 7 - - 150 120 MIN. Y R 270-560 BS 0.055(1.40) 0.047(1.20) - - 0.1 - - - 0.4 BASE EMITTER COLLECTOR * * * * Power dissipation PCM : 0.2 W(Tamb=25OC) Collector current ICM : 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC 1 1 2 3 2 3 For capacitive load, derate current by 20%. Single phase, half wave, 60 Hz, resistive or inductive load. |
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