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BC848 Datasheet(PDF) 2 Page - Rectron Semiconductor

Part # BC848
Description  NPN Silicon Planar Epitaxial Transistors
PDF  2 Pages
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Manufacturer  RECTRON [Rectron Semiconductor]
Direct Link  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

BC848 Datasheet(HTML) 2 Page - Rectron Semiconductor

  BC848 Datasheet HTML 1Page - Rectron Semiconductor BC848 Datasheet HTML 2Page - Rectron Semiconductor  
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BC846
BC847
BC848
MIN TYP MAX
15
4
0.58
0.7
0.77
0.25
0.60
0.7
0.9
90
150
270
110
450
110
800
110
220
200
450
420
800
2.5
100
125
500
125
900
125
260
240
500
450
900
10
BC856
BC857/BC858
| hfe |
DC Current Gain
IC = 10uA, VCE = 5V
BC846A/BC847A/BC848A
BC846B/BC847B/BC848B
BC847C/BC848C
hFE
Collector Emitter Saturation Voltage
VCE(Sat)
IC = 10mA, IB = 0.5mA
UNITS
DESCRIPTION
SYMBOL
IC = 2mA, VCE = 5V
fT
Small Signal Current Gain
Transition Frequency
Base Emitter On Voltage
TEST CONDITION
VBE(on)*
IC = 2mA, VCE = 5V
IC = 10mA, VCE = 5V
Collector Cut Off Current
ICBO
VCB = 30V, IE = 0
nA
VCB = 30V, IE = 0, Tj = 150
oC
uA
IC = 100mA, IB = 5mA
IC = 100mA, IB = 5mA
Base Emitter Saturation Voltage
VBE(Sat)***
IC = 10mA, IB = 0.5mA
BC847C/BC848C
BC846B/BC847B/BC848B
BC846A/BC847A/BC848A
IC = 2mA, VCE = 5V, f= 1kHZ
IE = ie = 0, VCB = 10V, f = 1MHZ
pF
BC847/BC848
BC846
*VBE (on) decreases by about 2mV/K with increase temperature.
***VBE (Sat) decreases by about 1.7mV/K with increase temperature.
V
V
V
IC = 10mA, VCB = 5V, f = 100MHZ
MHZ
Collector Capacitance
CC
dB
BC846A/BC847A/BC848A
NF
IC = 0.2mA, VCE = 5V
RS= 2k ohm, f = 1KHZ, B= 200HZ
Noise Figure
BC846B/BC847B/BC848B
BC847C/BC848C
Electrical Characteristics (at Ta=25
oC unless otherwise specified)
www.rectron.com
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