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BC847C Datasheet(PDF) 1 Page - Rectron Semiconductor |
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BC847C Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 BC847C Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 2007-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) DC current gain (VCE= 5V, IC= 2mA) Collector cut - off current (VCB= 50V, IE=0) Collector cut - off current (VCE= 45V, IB=0) Emitter cut - off current (VEB= 5V, IC=0) Collector - emitter saturation voltage (IC= 100mA, IB= 5mA) Base - emitter saturation voltage (IC= 100mA, IB= 5mA) Transition frequency (VCE= 5V, IC= 10mA, f= 100MHZ) CHARACTERISTICS SYMBOL UNITS - - - - 0.1 0.1 m A m A m A V V V V V Collector - base breakdown voltage (IC= 10mA, IE=0) Collector - emitter breakdown voltage (IC= 10mA, IB=0) Emitter - base breakdown voltage (IE= 10mA, IC=0) DEVICE MARKING BC847C Notes: 1. Transistor mounted on an FR4 Printed-circuit board. 1G VCBO VCEO VEBO IEBO hFE(1) ICBO ICEO VCE(sat) VBE(sat) fT MAX 50 45 6 - 420 100 MIN 0.055(1.40) 0.047(1.20) - 0.1 - - - - 1.1 MHZ 0.5 800 * * * * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 Collector current ICM : 0.1 A Collector-base voltage VCBO : 50 V Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC 1 2 3 Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. BASE EMITTER COLLECTOR 1 2 3 2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. |
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