CSL13003 datasheet(1/5 Pages) RECTRON

Part #	CSL13003

Description	NPN SILICON PLANAR EPITAXIAL,HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

PDF	5 Pages

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Manufacturer	RECTRON [Rectron Semiconductor]

Direct Link	http://www.rectron.com

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1 / 5 page

Applications

Suitable for Lighting, Switching Regulator and Motor Control

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

Collector Base Voltage

VCBO

Collector Emitter (sus) Voltage

VCEO

Emitter Base Voltage

VEBO

Collector Current Continuous

IC

Peak

**ICM

Power Dissipation @ Ta=25ºC

PC

Derate Above 25ºC

Power Dissipation @ TLead=25ºC

PD

Derate Above 25ºC

Operating And Storage Junction Temperature

Range

Tj, Tstg

THERMAL RESISTANCE

Junction to Case, Tc=25ºC

Rth (j-c)

Junction to Lead

Rth (j-L)

Junction to Ambient in free air

Rth (j-a)

`

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP MAX

UNIT

Collector Base Voltage

VCBO

IC=1mA, IE=0

600

V

Collector Emitter (sus) Voltage

*VCEO (sus)

IC=10mA, IB=0

400

V

Collector Cut Off Current

ICBO

VCB=600V, IE=0

1.0

mA

VCB=600V, IE=0, Tc=100ºC

5.0

mA

Emitter Cut Off Current

IEBO

VEB=9V, IC=0

1.0

mA

DC Current Gain

*hFE

IC=0.3A, VCE=2V (Note1)

10

30

IC=0.5A, VCE=2V

8.0

40

IC=1A, VCE=2V

4.0

25

Collector Emitter Saturation Voltage

*VCE (sat)

IC=0.5A, IB=0.1A

0.5

V

IC=1A, IB=0.25A

1.0

V

IC=1.5A, IB=0.5A

3.0

V

IC=1A, IB=0.25A,Tc=100ºC

1.0

V

Base Emitter Saturation Voltage

*VBE (sat)

IC=0.5A, IB=0.1A

1.0

V

IC=1A, IB=0.25A

1.2

V

IC=1A, IB=0.25A,Tc=100ºC

1.1

V

* Pulse Test: PW=300m

m

s, Duty Cycle=2%

** Pulse Test: Pulse Width=5ms, Duty Cycle=10%

48.0

ºC/W

62.5

ºC/W

VALUE

600

400

9.0

1.5

3.0

- 65 to +150

A

W

ºC

mW/ ºC

1.1

W

UNIT

V

8.8

mW/ ºC

113.6

2.0

16

ºC/W

E C

B

TO-92 PLASTIC PACKAGE

NPN SILICON PLANAR EPITAXIAL,HIGH SPEED,

HIGH VOLTAGE SWITCHING TRANSISTOR

CSL13003

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