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MMBTA06 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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MMBTA06 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 4 page ![]() FEATURES MECHANICAL DATA Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * * Weight: 0.008 gram SOT-23 MMBTA06 2007-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) Marking Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. 1GM Collector Collector - Base Breakdown Voltage (IC=100 uA, IE =0) Emitter - Base Breakdown Voltage (IE= 100 uA, IC = 0) - Emitter Breakdown Voltage(IC= 1mA, IB=0) SYMBOL MAX MIN TYP 80 80 4 - 1.2 MHz 200 0.1 0.1 100 100 V(BR)CBO V(BR)CEO VBE(sat) V(BR)EBO UNITS V V V V V uA uA uA SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) Dimensions in inches and (millimeters) 1 3 COLLECTOR EMITTER BASE 2 1 3 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.047(1.20) 0.055(1.40) 0.110(2.80) 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.071(1.80) 0.019(2.00) 0.089(2.25) 0.100(2.55) 0.012(0.30) 0.020(0.50) 0.000(0.00) 0.004(0.10) 0.035(0.90) 0.043(1.10) 0.003(0.08) 0.006(0.15) ICBO hFE Collector Cut - Off Current (VCB= 80V, IE=0) Collector Cut - Off Current (VEB= 3V, IC=0) DC Current Gain(VCE= 1V, IC= 100mA) Collector - Emitter Saturation Voltage(IC= 100 mA, IB= 10mA) Base - Emitter Saturation Voltage(IC=100mA, IB= 10mA) Transition Frequency(VCE= 2V, IC= 10mA, f =100MHz) IEBO CHARACTERISTICS * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC VCE(sat) fT - - 0.25 - - - - - - - - - - - - - - - - 0.1 Collector Cut - Off Current (VCE= 60V, IB=0) ICEO - |
Similar Part No. - MMBTA06 |
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Similar Description - MMBTA06 |
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