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X22C10PI Datasheet(PDF) 1 Page - Xicor Inc. |
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X22C10PI Datasheet(HTML) 1 Page - Xicor Inc. |
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1 / 12 page ![]() X22C10 1 Nonvolatile Static RAM © Xicor, Inc. 1991,1995 Patents Pending Characteristics subject to change without notice 3815-2.4 7/26/96 T0/CO/D3 SH FEATURES • High Performance CMOS —120ns RAM Access Time • High Reliability —Store Cycles: 1,000,000 —Data Retention: 100 Years • Low Power Consumption —Active: 40mA Max. —Standby: 100 µA Max. • Infinite Array Recall, RAM Read and Write Cycles • Nonvolatile Store Inhibit: VCC = 3.5V Typical • Fully TTL and CMOS Compatible • JEDEC Standard 18-Pin 300-mil DIP • 100% Compatible with X2210 —With Timing Enhancements DESCRIPTION The X22C10 is a 64 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a non- volatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less and the RECALL is completed within 1 µs. Xicor NOVRAMs are designed for unlimited write opera- tions to the RAM, either RECALLs from E2PROM or writes from the host. The X22C10 will reliably endure 1,000,000 STORE cycles. Inherent data retention is greater than 100 years. NONVOLATILE E 2 PROM MEMORY ARRAY ROW SELECT STATIC RAM MEMORY ARRAY COLUMN SELECT INPUT DATA CONTROL CONTROL LOGIC VCC VSS COLUMN I/O CIRCUITS STORE RECALL I/O1 I/O2 I/O3 I/O4 CS WE A3 A4 A5 ARRAY RECALL STORE A0 A1 A2 3815 FHD F01 256 Bit X22C10 64 x 4 FUNCTIONAL DIAGRAM PIN CONFIGURATION 3815 FHD F02 PLASTIC DIP CERDIP NC A4 A3 A2 A1 A0 CS VSS STORE 1 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 VCC NC A5 I/O4 I/O3 I/O2 I/01 WE X22C10 RECALL 3815 FHD F08.1 A4 A3 A2 A1 A0 CS VSS STORE 1 VCC A5 I/O4 I/O3 I/O2 I/O1 WE RECALL X22C10 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 SOIC SOIC |
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