X22C10DM datasheet(1/12 Pages) XICOR

Part #	X22C10DM

Description	Nonvolatile Static RAM

PDF	12 Pages

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Manufacturer	XICOR [Xicor Inc.]

Direct Link	http://www.xicor.com

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X22C10

1

Nonvolatile Static RAM

Characteristics subject to change without notice

3815-2.4 7/26/96 T0/CO/D3 SH

FEATURES

• High Performance CMOS

—120ns RAM Access Time

• High Reliability

—Store Cycles: 1,000,000

—Data Retention: 100 Years

• Low Power Consumption

—Active: 40mA Max.

—Standby: 100

µA Max.

• Infinite Array Recall, RAM Read and Write Cycles

• Nonvolatile Store Inhibit: VCC = 3.5V Typical

• Fully TTL and CMOS Compatible

• JEDEC Standard 18-Pin 300-mil DIP

• 100% Compatible with X2210

—With Timing Enhancements

DESCRIPTION

The X22C10 is a 64 x 4 CMOS NOVRAM featuring a

high-speed static RAM overlaid bit-for-bit with a non-

volatile E2PROM. The NOVRAM design allows data to

be easily transferred from RAM to E2PROM (STORE)

and from E2PROM to RAM (RECALL). The STORE

operation is completed within 5ms or less and the

RECALL is completed within 1

µs.

Xicor NOVRAMs are designed for unlimited write opera-

tions to the RAM, either RECALLs from E2PROM or

writes from the host. The X22C10 will reliably endure

1,000,000 STORE cycles. Inherent data retention is

greater than 100 years.

NONVOLATILE E

2

PROM

MEMORY ARRAY

ROW

SELECT

STATIC RAM

MEMORY ARRAY

COLUMN SELECT

INPUT

DATA

CONTROL

LOGIC

VCC

VSS

COLUMN

I/O CIRCUITS

STORE

RECALL

I/O1

I/O2

I/O3

I/O4

CS

WE

A3

A4

A5

ARRAY

RECALL

STORE

A0

A1

A2

3815 FHD F01

256 Bit

X22C10

64 x 4

FUNCTIONAL DIAGRAM

PIN CONFIGURATION

3815 FHD F02

PLASTIC DIP

CERDIP

NC

A4

A3

A2

A1

A0

CS

VSS

STORE

1

2

3

4

5

6

7

8

9

18

17

16

15

14

13

12

11

10

VCC

NC

A5

I/O4

I/O3

I/O2

I/01

WE

X22C10

RECALL

3815 FHD F08.1

A4

A3

A2

A1

A0

CS

VSS

STORE

1

VCC

A5

I/O4

I/O3

I/O2

I/O1

WE

RECALL

X22C10

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

SOIC

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