HFS4N60 datasheet(3/7 Pages) SEMIHOW

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◎ SEMIHOW REV.A0,July 2005

DS, Drain-Source Voltage [V]

101

100

10-1

100

101

※ Note :

1. 250㎲ Pulse Test

2. TC=25℃

Top:

15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

Bottem

5.0V

※ Note :

1. VDS=40V

2. 250㎲ Pulse Test

150℃

25℃

-55℃

101

100

10-1

SD, Source-Drain Voltage [V]

※ Note :

1. VGS=0V

2. 250㎲ Pulse Test

150℃

25℃

0.2

0.4

0.6

0.8

1.0

1.2

1.4

101

100

10-1

GS, Gate-Source Voltage [V]

D, Drain Current [A]

GS=20V

GS=10V

※ Note : T

J=25℃

Typical Characteristics

G, Total Gate Charge [nC]

* Note : I

D = 4A

DS = 300V

DS = 120V

DS = 480V

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

-1

200

400

600

800

1000

1200

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

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