KSH5027AF datasheet(2/5 Pages) SEMIHOW

2 / 5 page

High Voltage and High Reliability

KSH5027AF

High Voltage and High Reliability

- High Speed Switching

- Wide SOA

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector Emitter Voltage

VCBO

1100

800

Absolute Maximum Ratings TC=25℃ unless otherwise noted

TO-220F

1. Base

2. Collector

3. Emitter

3 Amperes

NPN Silicon Power Transistor

50 Watts

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

Collector Dissipation(Tc=25℃)

Junction Temperature

Storage Temperature

VCEO

VEBO

ICP

TSTG

800

1.5

150

-55~150

℃

1 2

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Base Breakdown Voltage

VCBO

IC=1mA, IE=0

1100

Collector-Emitter Breakdown Voltage

VCEO

IC=5mA, IB=0

800

Emitter-Base Breakdown Voltage

VEBO

IE=1mA, IE=0

Electrical Characteristics TC=25℃ unless otherwise noted

Collector-Emitter Sustaining Voltage

ICEX(sus)

IC=1.5A, IB1=-IB2=0.3A

L=2mH, Clamped

800

Collector Cut0off Current

ICBO

VCB=800V,IE=0

㎂

Emitter Cutoff Current

IEBO

VEB=5V,IC=0

㎂

DC Current Gain

hFE1

hFE2

VCE=5V,IC=0.2A

VCE=5V,IC=1A

Collector-Emitter Saturation Voltage

VCE(sat)

IC=1.5A,IB=0.3A

Base-Emitter Saturation Voltage

VBE(sat)

IC=1.5A,IB=0.3A

1.5

Output Capacitance

Cob

VCB=10V,IE=0, f=0.1MHz

㎊

Current Gain Bandwidth Product

VCE=10V,IC=0.2A

㎒

Turn on Time

ton

Vcc=400V, Ic=5A

IB1=-2.5A, IB2=2A

RL=200Ω

0.5

㎲

Storage Time

tstg

3.0

㎲

Fall Time

0.3

㎲

◎ SEMIHOW REV.A0,Oct 2007

Fall Time

0.3

㎲

Note : h

FE1 Classification

:10 ~ 20,

: 15 ~ 30,

: 20 ~ 40

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