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HFS10N65S Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS10N65S Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,Sep 2009 V DS, Drain-Source Voltage [V] Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics V GS, Gate-Source Voltage [V] V SD, Source-Drain Voltage [V] 0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 I D, Drain Current[A] V GS = 10V V GS = 20V * Note : T J = 25 oC 0 4 8 12 16 20 24 28 32 0 2 4 6 8 10 12 Q G, Total Gate Charge [nC] * Note : I D = 9.2A V DS = 325V V DS = 130V V DS = 520V 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ∗ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] |
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