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HFS11N40 Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS11N40 Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,Dec 2005 10 -1 10 0 10 1 0 600 1200 1800 2400 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Typical Characteristics 0 8 16 24 32 40 0 2 4 6 8 10 12 V DS = 200V V DS = 80V V DS = 320V ※ Note : I D = 11.4 A Q G, Total Gate Charge [nC] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics |
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