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HFS12N65S Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS12N65S Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,Aug 2009 V SD, Source-Drain Voltage [V] V GS, Gate-Source Voltage [V] V DS, Drain-Source Voltage [V] Typical Characteristics 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ∗ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 I D, Drain Current[A] V GS = 10V V GS = 20V * Note : T J = 25 oC Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 0 4 8 12 16 20 24 28 32 36 40 0 2 4 6 8 10 12 V DS = 325V V DS = 130V V DS = 520V * Note : I D = 12.0A Q G, Total Gate Charge [nC] |
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