◎ SEMIHOW REV.A0,Dec 2005

BV

R

I

 Originative New Design

 Superior Avalanche Rugged Technology

 Robust Gate Oxide Technology

 Very Low Intrinsic Capacitances

 Excellent Switching Characteristics

 Unrivalled Gate Charge : 17 nC (Typ.)

 Extended Safe Operating Area

 Lower R

 100% Avalanche Tested

Thermal Resistance Characteristics

FEATURES

Absolute Maximum Ratings

T

HFD3N80/HFU3N80

800V N-Channel MOSFET

Dec 2005

D-PAK

1.Gate 2. Drain 3. Source

I-PAK

HFD3N80

HFU3N80

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case

--

1.78

℃/W

Junction-to-Ambient*

--

50

Junction-to-Ambient

--

110

* When mounted on the minimum pad size recommended (PCB Mount)

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

800

V

I

D

Drain Current

– Continuous (T

2.5

A

Drain Current

– Continuous (T

1.57

A

I

DM

Drain Current

– Pulsed

(Note 1)

10

A

V

GS

Gate-Source Voltage

±30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

320

mJ

I

AR

Avalanche Current

(Note 1)

2.5

A

E

AR

Repetitive Avalanche Energy

(Note 1)

7.0

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation (T

2.5

W

Power Dissipation (T

- Derate above 25℃

70

W

0.56

W/℃

T

Operating and Storage Temperature Range

-55 to +150

℃

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

2

1

2

3

1

3