SSM60T03GP datasheet(4/5 Pages) SSC

Part #	SSM60T03GP

Description	N-channel Enhancement-mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	SSC [Silicon Standard Corp.]

Direct Link	http://www.siliconstandard.com

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SSM60T03GP,S

9/16/2005 Rev.3.1

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty Factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor = 0.5

Single Pulse

Q G , Total Gate Charge (nC)

I D =20A

V DS =16V

V DS =20V

V DS =24V

100

1000

10000

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

100

1000

0.1

100

V DS , Drain-to-Source Voltage (V)

1ms

100ms

10ms

100us

td(on) tr

td(off) tf

VDS

VGS

10%

90%

4.5V

QGS

QGD

Charge

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