SSM9980M datasheet(4/5 Pages) SSC

Part #	SSM9980M

Description	DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	SSC [Silicon Standard Corp.]

Direct Link	http://www.siliconstandard.com

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SSM9980M/GM

12/10/2004 Rev.2.01

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

td(on) tr

td(off) tf

VDS

VGS

10%

90%

4.5V

QGS

QGD

Charge

100

1000

10000

131721

2529

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

Ciss

Coss

Crss

1020

304050

Q G , Total Gate Charge (nC)

I D =4A

V DS =64V

V DS =50V

V DS =40V

0.01

0.1

100

0.1

100

1000

V DS , Drain-to-Source Voltage (V)

1ms

10ms

100ms

T A =25

o C

Single Pulse

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

100

1000

t , Pulse Width (s)

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 135°C/W

0.02

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