BCP69 datasheet(1/1 Pages) ZETEX

Part #	BCP69

Description	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

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SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 FEBRUARY 1996

7

FEATURES

* For AF drivers and output stages

* High collector current and Low VCE(sat)

COMPLEMENTARY TYPE BCP68

PARTMARKING DETAIL

BCP69

BCP69 25

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-25

V

Collector-Emitter Voltage

VCEO

-20

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-2

A

Continuous Collector Current

IC

-1

A

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature

Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-25

V

IC=-10µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-20

V

IC=- 30mA

Emitter-Base

Breakdown Voltage

V(BR)EBO

-5

V

IE=-10µA

Collector Cut-Off

Current

ICBO

-100

-10

nA

µ

A

VCB=-25V

VCB=-25V, Tamb=150°C

Emitter Cut-Off Current IEBO

-10

µ

A

VEB=-5V

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.5

V

IC=-1A, IB=-100mA*

Base-Emitter Turn-On

Voltage

VBE(on)

- 0.6

-1.0

V

IC=-5A, VCE=-10V*

IC=-1A, VCE=-1V*

Static Forward Current

Transfer Ratio

hFE

BCP69

BCP69-25

50

63

160

250

400

IC=-5mA, VCE=-10V*

IC=-500mA, VCE=-1V*

Transition Frequency

fT

100

MHz

IC=-100mA, VCE=-5V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT549 datasheet.

BCP69

C

E

B

3 - 20

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