2PD601ASW datasheet(4/8 Pages) NXP

Part #	2PD601ASW

Description	NPN general purpose transistors; 50 V, 100 mA

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

4 / 8 page

2004 Feb 12

NXP Semiconductors

Product data sheet

NPN general purpose transistors; 50 V,

100 mA

2PD601A series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0; VCB = 60 V

−

IE = 0; VCB = 60 V; Tj = 150 °C

−

μA

IEBO

emitter-base cut-off current

IC = 0; VEB = 5 V

−

hFE

DC current gain

IC = 100 mA; VCE = 2 V; note 1

−

hFE

DC current gain

IC = 2 mA; VCE = 10 V

group Q

160

260

group R

210

340

group S

290

460

VCEsat

collector-emitter saturation voltage

IC = 100 mA; IB = 10 mA; note 1

−

250

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

transition frequency

IC = 2 mA; VCE = 10 V;

f = 100 MHz

100

−

MHz

2PD601ASW Datasheet(PDF) 4 Page - NXP Semiconductors

2PD601ASW Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL