SOT23 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 – OCTOBER 1995

FEATURES

COMPLEMENTARY TYPE –

FMMT558

PARTMARKING DETAIL –

458

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

400

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

5V

Continuous Collector Current

225

mA

Peak Pulse Current

1A

Base Current

200

mA

500

mW

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

400

V

Collector-Emitter

Breakdown Voltage

400

V

Emitter-Base

Breakdown Voltage

5V

Collector Cut-Off Current

100

nA

Collector Cut-Off Current

100

nA

Emitter Cut-Off Current

100

nA

Collector-Emitter

Saturation Voltage

0.2

0.5

V

V

Base-Emitter

Saturation Voltage

0.9

V

Base-Emitter

Turn On Voltage

0.9

V

Static Forward

Current Transfer Ratio

100

100

15

300

Transition Frequency

50

MHz

f=20MHz

Collector-Base

Breakdown Voltage

5pF

Switching times

135 Typical

2260 Typical

ns

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

FMMT458

C

B

E

SOT23

3 - 113

3 - 112

FMMT458

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

20

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

Collector Current (Amps)

Collector Current (Amps)

-55°C

+25°C

+100°C

+175°C

+100°C

+25°C

-55°C

Collector Current (Amps)

Collector Current (Amps)

Collector Current (Amps)

300

200

100

Collector Voltage (Volts)

Safe Operating Area

100

110

0.001

0.01

0.1

1.0

D.C.

1s

100ms

10ms

1.0ms

0.1ms

0.001

0.001

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

-55°C

+25°C

+100°C

+175°C

0.001

0.001

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

-55°C

+25°C

+100°C

+175°C

0.001

1000