74HC2G32DP datasheet(5/13 Pages) NXP

5 / 13 page

74HC_HCT2G32_3

Product data sheet

Rev. 03 — 12 May 2009

5 of 13

NXP Semiconductors

74HC2G32; 74HCT2G32

Dual 2-input OR gate

11. Dynamic characteristics

input

capacitance

1.5

74HCT2G32

VIH

HIGH-level

input voltage

VCC = 4.5 V to 5.5 V

2.0

1.6

2.0

VIL

LOW-level

input voltage

VCC = 4.5 V to 5.5 V

1.2

0.8

VOH

HIGH-level

output voltage

VI = VIH or VIL; VCC = 4.5 V

IO = −20 µA

4.4

4.5

4.4

IO = −4.0 mA

4.18

4.32

4.13

3.7

VOL

LOW-level

output voltage

VI = VIH or VIL; VCC = 4.5 V

IO = 20 µA

0.1

IO = 4.0 mA

0.15

0.26

0.33

0.4

input leakage

current

VI =VCC or GND;

VCC = 5.5 V

±0.1

±1.0

µA

ICC

supply current VI =VCC or GND; IO = 0 A;

VCC = 5.5 V

1.0

µA

∆ICC

additional

supply current

per input;

VCC = 4.5 V to 5.5 V;

VI =VCC − 2.1 V; IO =0A

300

375

410

µA

input

capacitance

1.5

Table 7.

Static characteristics …continued

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

°C

−40 °C to +85 °C −40 °C to +125 °C Unit

Min

Typ

Max

Min

Max

Min

Max

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.

Symbol Parameter

Conditions

°C

−40 °C to +85 °C −40 °C to +125 °C Unit

Min

Typ

Max

Min

Max

Min

Max

74HC2G32

tpd

propagation

delay

nA, nB to nY; see Figure 6

[1]

VCC = 2.0 V

110

VCC = 4.5 V

9.0

VCC = 6.0 V

7.0

transition

time

nY; see Figure 6

[2]

VCC = 2.0 V

125

VCC = 4.5 V

VCC = 6.0 V

CPD

power

dissipation

capacitance

per buffer;

CL = 50 pF; fi = 1 MHz;

VI = GND to VCC

[3]

-10-

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