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HAL320 Datasheet(PDF) 13 Page - Micronas

Part # HAL320
Description  Differential Hall-Effect Sensor IC
PDF  22 Pages
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Manufacturer  MICRONAS [Micronas]
Direct Link  http://www.micronas.com
Logo MICRONAS - Micronas

HAL320 Datasheet(HTML) 13 Page - Micronas

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HAL320
DATA SHEET
13
Micronas
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specifi-
cation is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
4.5
24
V
IO
Continuous Output On Current
3
–
20
mA
VO
Output Voltage
3
–
24
V
3.6. Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current
1
2.8
4.7
6.8
mA
TJ = 25 °C
IDD
Supply Current over
Temperature Range
1
1.8
4.7
7.5
mA
VDDZ
Overvoltage Protection
at Supply
1
–
28.5
32.5
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ
Overvoltage Protection at Output
3
–
28
32.5
V
IO = 25 mA, TJ = 25 °C,
t = 20 ms
VOL
Output Voltage over
Temperature Range
3
–
180
400
mV
IO = 20 mA
IOH
Output Leakage Current over
Temperature Range
3
–
0.06
10
μA
VOH = 4.5 V... 24 V,
DB < DBOFF, TJ ≤ 150 °C
fosc
Internal Oscillator
Chopper Frequency
–
–
62
–
kHz
ten(O)
Enable Time of Output
after Setting of VDD
3
–
35
–
μs
VDD = 12 V,
DB > DBON + 2mT or
DB < DBOFF – 2mT
tr
Output Rise Time
3
–
80
400
ns
VDD = 12 V, RL = 820 Ω,
CL = 20 pF
tf
Output Fall Time
3
–
45
400
ns
VDD = 12 V, RL = 820 Ω,
CL = 20 pF
RthJSB
case
SOT89B-2
Thermal Resistance Junction to
Substrate Backside
–
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm
(see Fig. 3–6)
RthJS
case
TO92UA-3,
TO92UA-4
Thermal Resistance
Junction to Soldering Point
–
150
200
K/W



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