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HAL320 Datasheet(PDF) 13 Page - Micronas |
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HAL320 Datasheet(HTML) 13 Page - Micronas |
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13 / 22 page ![]() HAL320 DATA SHEET 13 Micronas 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specifi- cation is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 4.5 24 V IO Continuous Output On Current 3 – 20 mA VO Output Voltage 3 – 24 V 3.6. Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current 1 2.8 4.7 6.8 mA TJ = 25 °C IDD Supply Current over Temperature Range 1 1.8 4.7 7.5 mA VDDZ Overvoltage Protection at Supply 1 – 28.5 32.5 V IDD = 25 mA, TJ = 25 °C, t = 20 ms VOZ Overvoltage Protection at Output 3 – 28 32.5 V IO = 25 mA, TJ = 25 °C, t = 20 ms VOL Output Voltage over Temperature Range 3 – 180 400 mV IO = 20 mA IOH Output Leakage Current over Temperature Range 3 – 0.06 10 μA VOH = 4.5 V... 24 V, DB < DBOFF, TJ ≤ 150 °C fosc Internal Oscillator Chopper Frequency – – 62 – kHz ten(O) Enable Time of Output after Setting of VDD 3 – 35 – μs VDD = 12 V, DB > DBON + 2mT or DB < DBOFF – 2mT tr Output Rise Time 3 – 80 400 ns VDD = 12 V, RL = 820 Ω, CL = 20 pF tf Output Fall Time 3 – 45 400 ns VDD = 12 V, RL = 820 Ω, CL = 20 pF RthJSB case SOT89B-2 Thermal Resistance Junction to Substrate Backside – 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5 mm (see Fig. 3–6) RthJS case TO92UA-3, TO92UA-4 Thermal Resistance Junction to Soldering Point – 150 200 K/W |
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