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BAW56 Datasheet(PDF) 13 Page - NXP Semiconductors

Part # BAW56
Description  High-speed switching diodes
PDF  15 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAW56 Datasheet(HTML) 13 Page - NXP Semiconductors

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BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
13 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAV756S_BAW56_SER_5 20071126
Product data sheet
-
BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BAW56M added
• Section 1.1 “General description”: amended
• Table 1 “Product overview”: added
• Table 2 “Quick reference data”: added
• Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of VRRM maximum value from 85 V to 90 V
• Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of VR maximum value from 75 V to 90 V
• Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of IR condition VR from 75 V to 80 V for Tj =25 °C
• Table 8 “Characteristics”: for BAV756S change of IR maximum value from 2.5 µAto0.5 µA
for Tj =25 °C
• Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
IR maximum value from 1 µA to 0.5 µA for Tj =25 °C
• Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of IR condition VR from 75 V to 80 V for Tj = 150 °C
• Table 8 “Characteristics”: for BAV756S change of IR maximum value from 60 µA to 30 µA
for IR condition VR =25V; Tj = 150 °C
• Table 8 “Characteristics”: for BAV756S change of IR maximum value from 100 µA to
150
µA for T
j = 150 °C
• Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
IR maximum value from 50 µA to 150 µA for Tj = 150 °C
• Section 8 “Test information”: added
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
BAV756S_2
19971021
Product specification
-
BAV756S_1
BAW56_4
20030325
Product specification
-
BAW56_3
BAW56S_2
19971021
Product specification
-
BAW56S_1
BAW56T_2
19971219
Product specification
-
-
BAW56W_4
19990511
Product specification
-
BAW56W_3



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