BC856S datasheet(6/12 Pages) NXP

6 / 12 page

BC856S_2

Product data sheet

Rev. 02 — 19 February 2009

6 of 12

NXP Semiconductors

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

VCE = −5V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 4.

Per transistor: DC current gain as a function of

collector current; typical values

Fig 5.

Per transistor: Collector current as a function

of collector-emitter voltage; typical values

VCE = −5V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

Fig 6.

Per transistor: Base-emitter voltage as a

function of collector current; typical values

Fig 7.

Per transistor: Base-emitter saturation voltage

as a function of collector current; typical

values

006aab429

200

300

100

400

500

hFE

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

VCE (V)

−5

−4

−2

−3

−1

006aab430

−0.10

−0.05

−0.15

−0.20

(A)

IB (mA) = −5.0

−4.5

−4.0

−3.5

−3.0

−2.5

−2.0

−1.5

−1.0

−0.5

006aab431

−0.6

−0.8

−0.4

−1.0

−1.2

VBE

(V)

−0.2

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

006aab432

−0.6

−0.8

−0.4

−1.0

−1.2

VBEsat

(V)

−0.2

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

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