BC869 datasheet(6/11 Pages) NXP

6 / 11 page

2004 Nov 08

NXP Semiconductors

Product data sheet

PNP medium power transistor;

20 V, 1 A

BC869

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −25 V; IE = 0 A

−

−100

VCB = −25 V; IE = 0 A

−

−10

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0 A

−

−100

hFE

DC current gain

BC869

VCE = −10 V; IC = −5 mA

−

VCE = −1 V; IC = −500 mA

−

375

VCE = −1 V; IC = −1 A

−

BC869

−16

VCE = −1 V; IC = −500 mA

100

−

250

BC869

−25

VCE = −1 V; IC = −500 mA

160

−

375

VCEsat

collector-emitter saturation voltage

IC = −1 A; IB = −100 mA

−

−500

VBE

base-emitter voltage

VCE = −10 V; IC = −5 mA

−

−700

VCE = −1 V; IC = −1 A

−

−1

collector capacitance

IE = ie = 0 A; VCB = −10 V;

f = 1 MHz

−

transition frequency

VCE = −5 V; IC = −50 mA;

f = 100 MHz

140

−

MHz

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