BCM856DSSLASHDG datasheet(6/14 Pages) NXP

6 / 14 page

BCM856BS_BCM856DS_1

Product data sheet

Rev. 01 — 7 August 2008

6 of 14

NXP Semiconductors

BCM856BS; BCM856DS

PNP/PNP matched double transistors

Tamb =25 °CVCE = −5V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Fig 1.

Collector current as a function of

collector-emitter voltage; typical values

Fig 2.

DC current gain as a function of collector

current; typical values

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Fig 3.

Base-emitter saturation voltage as a function

of collector current; typical values

Fig 4.

Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa540

VCE (V)

−10

−8

−4

−6

−2

−0.08

−0.12

−0.04

−0.16

−0.20

(A)

−0.25

IB (mA) = −2.5

−0.5

−0.75

−1.0

−1.25

−1.5

−1.75

−2.0

−2.25

006aaa541

200

400

600

hFE

IC (mA)

−10−2

−103

−102

−10−1

−10

−1

(1)

(2)

(3)

006aaa542

IC (mA)

−10−1

−103

−102

−1

−10

−0.5

−0.9

−1.3

−0.3

−0.7

−1.1

VBEsat

(V)

−0.1

(1)

(2)

(3)

006aaa543

−1

−10−1

−10

VCEsat

(V)

−10−2

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

BCM856DS/DG Datasheet(PDF) 6 Page - NXP Semiconductors

BCM856DS/DG Datasheet(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL