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ESDAVLC8-1BT2 Datasheet(PDF) 2 Page - STMicroelectronics

Part # ESDAVLC8-1BT2
Description  Single line low capacitance Transil for ESD protection
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ESDAVLC8-1BT2 Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
ESDAVLC8-1BM2, ESDAVLC8-1BT2
2/13
Doc ID 16937 Rev 1
1
Characteristics
Figure 2.
Electrical characteristics (definitions)
Table 1.
Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
VPP
(1)
1.
For a surge greater than the maximum values, the diode will fail in short-circuit.
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
MIL STD 883G - Method 3015-7: class 3
17
17
25
kV
PPP
(1)
Peak pulse power dissipation (8/20 µs)
Tj initial = Tamb
30
W
IPP
Peak pulse current (8/20 µs)
1.3
A
TOP
Operating junction temperature range
- 55 to + 150
°C
Tstg
Storage temperature range
- 65 to + 150
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
Table 2.
Electrical characteristics (values, Tamb = 25 °C)
Symbol
Test condition
Min.
Typ.
Max.
Unit
VBR
From pin1 to pin2, IR = 1 mA direct
14.5
17
V
From pin2 to pin1, IR = 1 mA reverse
8.5
11
IRM
VRM = 3 V
50
nA
Rd
Square pulse, IPP = 1 A tp = 2.5 µs
2
Ω
Cline
F = 1 MHz, VR = 0 V
4.5
5.5
pF
Symbol
Parameter
V
=
Breakdown voltage
I
=
Leakage current @ V
V
=
Stand-off voltage
I
=
Peak pulse current
I
=
Breakdown current
BR
RM
RM
RM
PP
R
V
=
Clamping voltage
I
=
Forward current
R
=
Series resistanc between input and output
C
=
Input capacitance per line
CL
PP
I/O
line
I
V
VBR
VRM
IR
IRM
IRM
IR
VRM
VBR



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