PESDXS2UT datasheet(2/13 Pages) NXP

2 / 13 page

2004 Apr 15

NXP Semiconductors

Product data sheet

Double ESD protection diodes in SOT23

package

PESDxS2UT series

FEATURES

• Uni-directional ESD protection of up to two lines

• Max. peak pulse power: P

pp = 330 W at tp = 8/20 µs

• Low clamping voltage: V

(CL)R = 20 V at Ipp = 18 A

• Ultra-low reverse leakage current: I

RM < 700 nA

• ESD protection > 23 kV

• IEC 61000-4-2; level 4 (ESD)

• IEC 61000-4-5 (surge); I

pp = 18 A at tp = 8/20 µs.

APPLICATIONS

• Computers and peripherals

• Communication systems

• Audio and video equipment

• High speed data lines

• Parallel ports.

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT23

plastic package. Designed to protect up to two

transmission or data lines from ElectroStatic Discharge

(ESD) damage.

MARKING

Note

* = p : made in Hong Kong.

* = t : made in Malaysia.

* = W : made in China.

QUICK REFERENCE DATA

PINNING

TYPE NUMBER

MARKING CODE(1)

PESD3V3S2UT

*U9

PESD5V2S2UT

*U1

PESD12VS2UT

*U2

PESD15VS2UT

*U3

PESD24VS2UT

*U4

SYMBOL

PARAMETER

VALUE

UNIT

VRWM

reverse stand-off

voltage

3.3, 5.2, 12, 15

and 24

diode capacitance

VR = 0 V;

f = 1 MHz

207, 152, 38, 32

and 23

number of

protected lines

DESCRIPTION

cathode 1

cathode 2

common anode

sym022

001aaa490

Fig.1 Simplified outline (SOT23) and symbol.

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