SOT223 P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 - OCTOBER 1995

7

FEATURES

PARTMARKING DETAIL –

ZVP2120

COMPLEMENTARY TYPE –

ZVN2120G

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

-200

V

-200

mA

Pulsed Drain Current

-1.2

A

Gate Source Voltage

±

20

V

2W

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

-200

V

Gate-Source Threshold

Voltage

-1.5

-3.5

V

Gate-Body Leakage

-20

nA

Zero Gate Voltage Drain

Current

-10

-100

µ

A

µ

A

(2)

On-State Drain Current(1)

-300

mA

Static Drain-Source On-State

Resistance (1)

25

Ω

Forward Transconductance

(1)(2)

50

mS

Input Capacitance (2)

100

pF

Common Source Output

Capacitance (2)

25

pF

7pF

Turn-On Delay Time (2)(3)

7ns

Rise Time (2)(3)

15

ns

Turn-Off Delay Time (2)(3)

12

ns

Fall Time (2)(3)

15

ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

ZVP2120G

D

D

S

G

3 - 431