PIMC31_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 24 March 2009

3 of 13

NXP Semiconductors

PIMC31

500 mA, 50 V NPN/PNP double RET; R1 = 1 k

Ω, R2 = 10 kΩ

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

output current

-

500

mA

total power dissipation

[1] -

290

mW

Per device

total power dissipation

[1] -

420

mW

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C

FR4 PCB, standard footprint

Fig 1.

Power derating curve

Table 5.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

−75

175

125

25

75

−25

006aab531

200

300

100

400

500

(mW)

0

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

thermal resistance from

junction to ambient

in free air

[1] -

-

431

K/W

thermal resistance from

junction to solder point

-

-

105

K/W

Per device

thermal resistance from

junction to ambient

in free air

[1] -

-

298

K/W