PMD9010D datasheet(8/16 Pages) NXP

8 / 16 page

PMD9010D_1

Product data sheet

Rev. 01 — 20 November 2006

8 of 16

NXP Semiconductors

PMD9010D

MOSFET driver

VCE =5V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 5.

TR1: DC current gain as a function of collector

current; typical values

Fig 6.

TR1: Collector current as a function of

collector-emitter voltage; typical values

VCE =5V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

TR1: Base-emitter voltage as a function of

collector current; typical values

Fig 8.

TR1: Base-emitter saturation voltage as a

function of collector current; typical values

006aaa923

200

300

100

400

500

hFE

IC (mA)

10−1

103

102

110

(1)

(2)

(3)

VCE (V)

006aaa924

0.08

0.12

0.04

0.16

0.20

(A)

IB (mA) = 5

4.5

3.5

2.5

1.5

0.5

006aaa925

0.6

0.8

0.4

1.0

1.2

VBE

(V)

0.2

IC (mA)

10−2

103

102

10−1

(2)

(3)

(1)

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0.6

0.8

0.4

1.0

1.2

VBEsat

(V)

0.2

IC (mA)

10−1

103

102

110

(1)

(2)

(3)

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