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JS28F640J3D-75 Datasheet(PDF) 61 Page - Numonyx B.V

Part # JS28F640J3D-75
Description  Numonyx??Embedded Flash Memory (J3 v. D)
PDF  68 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

JS28F640J3D-75 Datasheet(HTML) 61 Page - Numonyx B.V

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November 2007
Datasheet
308551-05
61
Numonyx™ Embedded Flash Memory (J3 v. D)
13.5
System Interface Information
The following device information can optimize system interface software.
13.6
Device Geometry Definition
This field provides critical details of the flash device geometry.
Table 37: System Interface Information
Offset
Length
Description
Add.
Hex
Code
Value
1Bh
1
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1B:
--27
2.7 V
1Ch
1
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1C:
--36
3.6 V
1Dh
1
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1D:
--00
0.0 V
1Eh
1
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1E:
--00
0.0 V
1Fh
1
“n” such that typical single word program time-out = 2n µs
1F:
--06
64 µs
20h
1
“n” such that typical max. buffer write time-out = 2n µs
20:
--07
128 µs
21h
1
“n” such that typical block erase time-out = 2n ms
21:
--0A
1 s
22h
1
“n” such that typical full chip erase time-out = 2n ms
22:
--00
NA
23h
1
“n” such that maximum word program time-out = 2n times typical
23:
--02
256 µs
24h
1
“n” such that maximum buffer write time-out = 2n times typical
24:
--03
1024 µs
25h
1
“n” such that maximum block erase time-out = 2n times typical
25:
--02
4 s
26h
1
“n” such that maximum chip erase time-out = 2n times typical
26:
--00
NA
Table 38: Device Geometry Definition
Offset
Length
Description
Code See Table Below
27h
1
“n” such that device size = 2n in number of bytes
27:
28h
2
Flash device interface: x8 async x16 async x8/x16 async
28:
--02
x8/
x16
28:00,29:00 28:01,29:00 28:02,29:00
29:
--00
2Ah
2
“n” such that maximum number of bytes in write buffer = 2n
2A:
--05
32
2B:
--00
2Ch
1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or more
contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
2C:
--01
1
2Dh
4
Erase Block Region 1 Information
2D:
bits 0–15 = y, y+1 = number of identical-size erase blocks
2E:
bits 16–31 = z, region erase block(s) size are z x 256 bytes
2F:
30:



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