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EMIF06-1005N12 Datasheet(PDF) 2 Page - STMicroelectronics |
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EMIF06-1005N12 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 12 page ![]() Characteristics EMIF06-1005N12 2/12 Doc ID 16959 Rev 1 1 Characteristics Figure 3. Electrical characteristics (definitions) Table 1. Absolute ratings (limiting values) Symbol Parameter and test conditions Value Unit VPP ESD discharge IEC 61000-4-2, level 4 air discharge contact discharge ESD-Machine Model : (MM: C = 200 pF, R = 25 Ω L = 500 nH) ESD-Charged Device Model: (JESD22-C101D) 15 15 2 1 kV Tj Junction temperature at Tamb = 25 °C 125 °C Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to + 150 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6 8 10 V VF IF = 10 mA 0.5 1 1.5 V IRM VRM = 3 V per line 200 nA RI/O Tolerance ± 15% 85 100 115 Ω Cline Vline = 0 V, Vosc = 30 mV, F = 1 MHz 38 45 52 pF I V IF IRM IR IPP VRM VF VBR VCL Symbol Parameter V = Breakdown voltage I = Leakage current @ V V = Stand-off voltage I = Forward current I = Peak pulse current I = Breakdown current V = Forward voltage drop R BR RM RM RM PP R F V = Clamping voltage CL F d = Dynamic impedance I = Forward current R = Series resistanc between input and output C = Input capacitance per line PP I/O line |
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