TPC6003 datasheet(2/7 Pages) TOSHIBA

2 / 7 page

TPC6003

2007-01-15

Marking (Note 5)

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

µA

Drain cut-OFF current

IDSS

VDS = 30 V, VGS = 0 V

⎯

µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

⎯

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

⎯

2.5

VGS = 4.5 V, ID = 3 A

⎯

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 3 A

⎯

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 3 A

3.5

⎯

Input capacitance

Ciss

⎯

1250

⎯

Reverse transfer capacitance

Crss

⎯

155

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

170

⎯

Rise time

⎯

Turn-ON time

ton

⎯

Fall time

⎯

Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 µs

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

Gate-source charge

Qgs

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− 24 V, VGS = 10 V, ID = 6 A

⎯

VDD ∼− 15 V

0 V

VGS

10 V

ID = 3 A

VOUT

Part No.

(or abbreviation code)

S2D

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot code (month)

Lot No.

Pin #1

Lot code

(year)

Product-specific code

TPC6003 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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