TPC8403

2006-11-13

1

TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type

(P Channel U-MOSII/N Channel U-MOSII)

TPC8403

Motor Drive Applications

Notebook PC Applications

Portable Equipment Applications

• Low leakage current:

• Enhancement mode

Rating

Characteristics

Symbol

P Channel N Channel

Unit

Drain-source voltage

−30

30

V

−30

30

V

Gate-source voltage

±20

±20

V

DC

(Note 1)

−4.5

6

Drain current

Pulse

(Note 1)

−18

24

A

Single-device operation

(Note 3a)

1.5

1.5

Drain power

dissipation

(t

= 10s)

(Note 2a)

Single-device value at

dual operation (Note 3b)

1.1

1.1

Single-device operation

(Note 3a)

0.75

0.75

Drain power

dissipation

(t

= 10s)

(Note 2b)

Single-device value at

dual operation (Note 3b)

0.45

0.45

W

Single pulse avalanche energy

26.3

(Note 4a)

46.8

(Note 4b)

mJ

Avalanche current

−4.5

6

A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, 3b, 5)

0.11

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.080 g (typ.)

Circuit Configuration

8

7

6

5

1

2

3

4

N-ch

P-ch