SSM3K7002BFU datasheet(2/5 Pages) TOSHIBA

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SSM3K7002BFU

2009-11-26

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Gate leakage current

IGSS

VGS = ± 20 V, VDS = 0 V

⎯

± 10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = -10 V

⎯

Drain cutoff current

IDSS

VDS = 60 V, VGS = 0 V

⎯

μA

Gate threshold voltage

Vth

VDS = 10 V, ID = 0.25 mA

1.5

⎯

3.1

Forward transfer admittance

⎪Yfs⎪

VDS = 10 V, ID = 200 mA

(Note 2)

225

⎯

ID = 500 mA, VGS = 10 V

(Note 2)

⎯

1.62

2.1

ID = 100 mA, VGS = 5 V

(Note 2)

⎯

1.90

2.6

Drain-source ON-resistance

RDS (ON)

ID = 100 mA, VGS = 4.5 V

(Note 2)

⎯

2.10

3.3

Input capacitance

Ciss

⎯

17.0

⎯

Reverse transfer capacitance

Crss

⎯

1.9

⎯

Output capacitance

Coss

VDS = 25 V, VGS = 0 V, f = 1 MHz

⎯

3.6

⎯

Turn-on delay time

td(on)

⎯

3.3

6.6

Switching time

Turn-off delay time

td(off)

VDD = 30 V , ID = 200 mA ,

VGS = 0 to 10 V

⎯

14.5

Drain-source forward voltage

VDSF

ID = -200 mA, VGS = 0 V

(Note 2)

⎯

-0.84

-1.2

Note2: Pulse test

Switching Time Test Circuit

Precaution

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (0.25 mA for the

SSM3K7002BFU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower

than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).

Take this into consideration when using the device

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

(b) VIN

(a) Test circuit

td(on)

90 %

10 %

0 V

10 V

10 %

90 %

td(off)

VDD

VDS (ON)

VDD = 30 V

Duty

≤ 1%

VIN: tr, tf < 2 ns

(Zout = 50 Ω)

Common Source

= 25 °C

10 V

μs

VDD

OUT

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