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PIC16F676-E/ST Datasheet(PDF) 90 Page - Microchip Technology |
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PIC16F676-E/ST Datasheet(HTML) 90 Page - Microchip Technology |
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90 / 132 page  PIC16F630/676 DS40039F-page 90 2010 Microchip Technology Inc. 12.3 DC Characteristics: PIC16F630/676-I (Industrial) Standard Operating Conditions (unless otherwise stated) Operating temperature -40 C TA +85C for industrial Param No. Device Characteristics Min Typ† Max Units Conditions VDD Note D020 Power-down Base Current (IPD) — 0.99 700 nA 2.0 WDT, BOD, Comparators, VREF, and T1OSC disabled — 1.2 770 nA 3.0 — 2.9 995 nA 5.0 D021 — 0.3 1.5 A 2.0 WDT Current(1) —1.8 3.5 A3.0 —8.4 17 A5.0 D022 — 58 70 A 3.0 BOD Current(1) —109 130 A5.0 D023 — 3.3 6.5 A 2.0 Comparator Current(1) —6.1 8.5 A3.0 —11.5 16 A5.0 D024 — 58 70 A2.0 CVREF Current(1) —85 100 A3.0 —138 160 A5.0 D025 — 4.0 6.5 A 2.0 T1 OSC Current(1) —4.6 7.0 A3.0 — 6.0 10.5 A5.0 D026 — 1.2 755 nA 3.0 A/D Current(1) — 0.0022 1.0 A5.0 † Data in “Typ” column is at 5.0V, 25 C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The peripheral current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when calculating total current consumption. 2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD. |
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