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ADT7483AARQZ-R7 Datasheet(PDF) 22 Page - ON Semiconductor |
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ADT7483AARQZ-R7 Datasheet(HTML) 22 Page - ON Semiconductor |
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22 / 24 page ![]() ADT7483A Rev. 1 | Page 22 of 24 | www.onsemi.com APPLICATIONS NOISE FILTERING For temperature sensors operating in noisy environments, previous practice was to place a capacitor across the D+ and D− pins to help combat the effects of noise. However, large capacitances affect the accuracy of the temperature measurement, leading to a recommended maximum capacitor value of 1,000 pF. FACTORS AFFECTING DIODE ACCURACY Remote Sensing Diode The ADT7483A is designed to work with substrate transistors built into processors or with discrete transistors. Substrate transistors will generally be PNP types with the collector connected to the substrate. Discrete types can be either a PNP or NPN transistor connected as a diode (base shorted to collector). If an NPN transistor is used, the collector and base are connected to D+ and the emitter to D−. If a PNP transistor is used, the collector and base are connected to D− and the emitter to D+. To reduce the error due to variations in both substrate and discrete transistors, the following factors should be taken into consideration: • The ideality factor, nf, of the transistor is a measure of the deviation of the thermal diode from ideal behavior. The ADT7483A is trimmed for an nf value of 1.008. Use the following equation to calculate the error introduced at a temperature,T (°C) when using a transistor whose nf does not equal 1.008. Consult the processor data sheet for the nf values. ( ) ( ) T Kelvin n T f + × = Δ 15 . 273 008 . 1 / 008 . 1 – To factor this in, write the ΔT value to the offset register. It is then automatically added to, or subtracted from, the temperature measurement by the ADT7483A. • Some CPU manufacturers specify the high and low current levels of the substrate transistors. The high current level of the ADT7483A, IHIGH, is 200 μA, and the low level current, ILOW, is 12 μA. If the ADT7483A current levels do not match the current levels specified by the CPU manufacturer, it may be necessary to remove an offset. Refer to the CPU data sheet to determine whether this offset needs to be removed and how to calculate it. This offset is programmed to the offset register. It is important to note that if more than one offset must be considered, program the algebraic sum of these offsets to the offset register. If a discrete transistor is used with the ADT7483A, the best accuracy is obtained by choosing devices according to the following criteria: • Base-emitter voltage greater than 0.25 V at 6 μA, at the highest operating temperature. • Base-emitter voltage less than 0.95 V at 100 μA, at the lowest operating temperature. • Base resistance less than 100 Ω. • Small variation in hFE (50 to 150) that indicates tight control of VBE characteristics. Transistors such as 2N3904, 2N3906, or equivalents in SOT-23 packages, are suitable devices to use. THERMAL INERTIA AND SELF-HEATING Accuracy depends on the temperature of the remote sensing diode and/or the local temperature sensor being at the same temperature as that being measured. A number of factors can affect this. Ideally, the sensor should be in good thermal contact with the part of the system being measured. If it is not, the thermal inertia caused by the sensor’s mass causes a lag in the response of the sensor to a temperature change. In the case of the remote sensor, this should not be a problem, since it will either be a substrate transistor in the processor or a small package device, such as SOT-23, placed in close proximity to it. The on-chip sensor, however, is often remote from the processor and only monitors the general ambient temperature around the package. In practice, the ADT7483A package will be in electrical, and hence thermal, contact with a PCB and may also be in a forced airflow. How accurately the temperature of the board and/or the forced airflow reflects the temperature to be measured will also affect the accuracy. Self-heating, due to the power dissipated in the ADT7483A or the remote sensor, causes the chip temperature of the device or remote sensor to rise above ambient. However, the current forced through the remote sensor is so small that self-heating is negligible. In the case of the ADT7483A, the worst-case condition occurs when the device is converting at 64 conversions per second while sinking the maximum current of 1 mA at the ALERT and THERM output. In this case, the total power dissipation in the device is about 4.5 mW. The thermal resistance, θJA, of the QSOP-16 package is about 150°C/W. |
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