© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 2

1

Publication Order Number:

D45C12/D

D45C12 (PNP),

D44C12 (NPN)

Complementary Silicon

Power Transistor

The D45C12 and D44C12 arefor general purpose driver or

medium power output stages in CW or switching applications.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

80

Vdc

Collector-Emitter Voltage

VCES

90

Vdc

Emitter Base Voltage

5.0

Vdc

Collector Current - Continuous

Peak (Note 1)

4.0

6.0

Adc

30

1.67

W

W/

°C

Operating and Storage Junction

Temperature Range

-55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction-to-Case

4.2

°C/W

Thermal Resistance,

Junction-to-Ambient

75

°C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8 in from Case for 5 Sec

275

°C

1. Pulse Width

v 6.0 ms, Duty Cycle v 50%.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

D4xC12G

AYWW

1

Base

3

Emitter

4

Collector

2

Collector

4.0 AMPERE COMPLEMENTARY

SILICON POWER

TRANSISTORS 80 VOLTS

TO-220AB

CASE 221A

STYLE 1

1

2

3

4

MARKING DIAGRAM

& PIN ASSIGNMENT

x

= 4 or 5

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb-Free Package

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com